Detachment of epitaxial graphene from SiC substrate by XUV laser radiation - ScienceDirect
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Fabrication of through-wafer 3D microfluidics in silicon carbide using femtosecond laser
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Coatings | Free Full-Text | Reduced On-Resistance and Improved 4H-SiC Junction Barrier Schottky Diodes Performance by Laser Annealing on C-Face Ohmic Regions in Thin Structures
Effects of Excimer Laser Irradiation on the Morphological, Structural, and Electrical Properties of Aluminum-Implanted Silicon Carbide (4H-SiC) | ACS Applied Electronic Materials
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Selecting the laser source for SiC laser annealing equipment, an essential technology for manufacturing power semiconductors|Laser Annealing|Solution|Solutions|Sumitomo Heavy Industries, Ltd. Mechatronics Division