Ayari Chosen for European MRS Young Scientist Award | School of Electrical and Computer Engineering at the Georgia Institute of Technology
Physical and electrical characterization of a silicon suboxide seed layer | SPIE Photonics West
Photovoltaic Concentration: Research and Development
Electronics | Free Full-Text | Analysis of Deep Level Defects in GaN p-i-n Diodes after Beta Particle Irradiation
Highly sensitive detection of NO2 gas using BGaN/GaN superlattice-based double Schottky junction sensors
Nanoselective area growth of GaN by metalorganic vapor phase epitaxy on 4H-SiC using epitaxial graphene as a mask: Applied Physics Letters: Vol 108, No 10
3 questions à] Jean Paul Salvestrini, directeur exécutif de Georgia Tech Lorraine : découvrez les technologies de micro et nano fabrication pour la micro-électronique | Factuel | le site d'actu de l'Université